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As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices.
Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation.
Provides an overview of work done on strain, dislocations and mechanical properties of strained layers. This book discusses the effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors, and Piezoelectric Effects and Quantum Confined Stark Effects.
This book is intended for readers desiring a comprehensive analysis of the latest developments in widegap II-VI materials research for opto-electronic applications and basic insight into the fundamental underlying principles.
There is a growing demand for electronic signal processing at elevated temperatures. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates.
There is a growing demand for electronic signal processing at elevated temperatures. In a search for semiconductors with a wider energy gap to avoid leakage currents at high operating temperatures, one developed compound semiconductors such as GaAIAs on GaAs substrates.
This book is intended for readers desiring a comprehensive analysis of the latest developments in widegap II-VI materials research for opto-electronic applications and basic insight into the fundamental underlying principles.
Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation.
The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area.
The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area.
Infrared (IR) detectors fall into two main categories, thermal and photon. The earliest detectors of IR were thermal in nature, e.g. thermometers. The subsequent developments of these detectors, such as thermopiles, resistance bolometers, Golay cells and pyroelectric detectors, can operate at ambient temperature but have disadvantages of insensitivity and slowness. A wide variety of semiconductor photon detectors have been developed and these possess very high sensitivity, high frequency response but have the disadvantage of needing cryogenic cooling, particularly at longer wavelengths. In the main, the applications have been in the military sphere, but widespread industrial and scientific applications also exist. The majority of development funding for these semiconducting IR detectors has, however, come from military sources. This book is an attempt to provide an up-to-date view of the various IR detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers to the field and at those already working in the IR industry. It is hoped that the former will find the book readable both as an introductory text and as a useful guide to the literature. Workers in one of the various IR areas will, hopefully, find the book useful in bringing them up-to-date with other, sometimes competing, technologies. To both groups of readers we trust that the book will prove interesting, thought-provoking and a spur to further progress in this fascinating and challenging field of endeavour.
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