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This book focuses on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. It discusses the obstacles any new technology must overcome to be commercially successful with specific references to the challenges confronting Silicon-Molecular Beam Epitaxy.
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation., whilst Volume II treats all aspects of heteroepitaxy.
Quantum size effects are becoming increasingly important in microelectronics, as the dimensions of the structures shrink laterally towards 100 nm and vertically towards 10 nm. Keeping in mind the trend towards systems on chip, this book deals with silicon-based quantum devices and focuses on room-temperature operation.
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