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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization - Bog
indgår i Semiconductors and Semimetals serien
- Indbinding:
- Hardback
- Sideantal:
- 316
- Udgivet:
- 12. juni 1997
- Størrelse:
- 152x229x22 mm.
- Vægt:
- 620 g.
- 2-3 uger.
- 6. december 2024
Normalpris
-
BLACK NOVEMBER
Medlemspris
Prøv i 30 dage for 45 kr.
Herefter fra 79 kr./md. Ingen binding.
Herefter fra 79 kr./md. Ingen binding.
Beskrivelse af Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization
Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.
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