Bøger af Kamakhya Prasad Ghatak

In recent years, there has been considerable interest in studying the quantum capacitance (QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of various technologically important materials which find extensive applications in many directions in low dimensional electronics. The 2D and 1D electron statistics in inversion layers of MOSFETs can rather easily be varied by changing the gate voltage which, in turn, brings a change of the surface electric field, the QC depends on the gate-voltage. This first-of-its-kind book deals solely with the QC in 2D MOSFETs of non-linear optical, ternary, quaternary, III-V compounds, II-VI, IV-VI, stressed Kane type, Ge, GaP, Bismuth telluride, Gallium Antimonide and their 1D NWFETs counter parts. The influence of quantizing magnetic field, crossed electric and magnetic fields, parallel magnetic field, have also been considered on the QC of the said devices of the aforementioned materials. The influences of strong light waves and ultra-strong electric field present in nano-devices have also been considered. The accumulation layers of the quantum effect devices of the said materials have also been discussed in detail by formulating the respective dispersion relations of the heavily doped compounds. The QC in 1D MOSFET of the said materials have also been investigated in this context on the basis of newly formulated electron energy spectra in all the cases. The QC in quantum well transistors and magneto quantum well transistors together with CNTFETs have been formulated and discussed in detail along with I-V equations of ballistic QWFETs and NWFETs together with their heavily doped counter parts under different external physical conditions. In this context, experimental determinations are suggested of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length, Elastic Constants and the content of this book finds twenty-two different applications in the arena of nanoscience and nanotechnology.This book contains hundred open research problems which form the integral part of the text and are useful for both PhD aspirants and researchers.

This book highlights the importance of Electron Statistics (ES), which occupies a singular position in the arena of solid state sciences, in heavily doped (HD) nanostructures by applying Heisenberg¿s Uncertainty Principle directly without using the complicated Density-of-States function approach as given in the literature. The materials considered are HD quantum confined nonlinear optical, III-V, II-VI, IV-VI, GaP, Ge, PtSb2, stressed materials, GaSb, Te, II-V, Bi2Te3, lead germanium telluride, zinc and cadmium diphosphides, and quantum confined III-V, IV-VI, II-VI and HgTe/CdTe super-lattices with graded interfaces and effective mass super-lattices. The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of materials in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields. The influence of magnetic quantization, magneto size quantization, quantum wells, wires and dots, crossed electric and quantizing fields, intense electric field, and light waves on the ES in HD quantized structures and superlattices are discussed. The content of this book finds six different applications in the arena of nano-science and nanotechnology and the various ES dependent electronic quantities, namely the effective mass, the screening length, the Einstein relation and the elastic constants have been investigated. This book is useful for researchers, engineers and professionals in the fields of Applied Sciences, solid state and materials science, nano-science and technology, condensed matter physics, and allied fields, including courses in semiconductor nanostructures.¿

The presence of intense light waves in optoelectronics and strong electric field in nano-devices change the band structure of materials in fundamental ways, which have also been incorporated in the study of ES in HD quantized structures of optoelectronic compounds that control the studies of the HD quantum effect devices under strong fields.

The Elastic Constants (EC) is a very important mechanical property of the materials and its significance is already well known in the literature.

This book presents the dispersion relation in heavily doped nano-structures. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed.

The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context.

Einstein's Photoemission

This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The book covers a wide range of different technologically important electronic compounds, and contains 200 open research problems.

This book examines the effective electron mass in nanodevices, explaining changes in band structure of optoelectronic semiconductors, and offering insight into electronic behavior in doped semiconductors and nanostructures. Includes 200 problems and questions.

This monograph investigates photoemission from optoelectronic materials and their nanostructures. It contains open-ended research problems which form an integral part of the text and are useful for graduate courses as well as aspiring Ph.D.'s and researchers.

Focusing only on the Einstein relation in compound semiconductors and their nanostructures, this book deals with open research problems from carbon nanotubes to quantum wire superlattices with different band structures, and other field assisted systems.