Name: Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
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Author: Ludwig Stockmeier
ISBN: 9783839613450

Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method. af Ludwig Stockmeier

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The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.

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Sprog:
Engelsk

ISBN:
9783839613450

Forlag:
Fraunhofer IRB Verlag

Indbinding:
Paperback

Sideantal:
204

Udgivet:
1. august 2018

Størrelse:
148x210x11 mm.

Leveringstid: 2-4 uger.
Forventet levering: 17. december 2024

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The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.

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